Elpida first with 25nm 4Gbit DDR3

Just 2 months after sampling the 2Gbit device the new device with double capacity is ready for manufacturing.

Elpida Memory Inc. (TYO:6665) has managed to pull another first by being the first company to finish the development of a 25nm 4Gbit synchronous DRAM supporting the DDR3 standard, the company said in a press release.

Compared to the previous generation that used 30nm process technology the new device has a 25 to 30 percent lower operating current and standby current by about 30 to 50 percent lower than the previous 30nm devices.

According to Elpida the new devices are available in two different SKUs with a data width of either four (EDJ4104BCBG ) or eight bits (EDJ4108BCBG). The operating speed per pin is 1888 MHz and the operating temperature is specified as being from 0 to 95 C. The supply voltage is 1.5V and low power operation requires 1.35V.

The device will initially be used in servers, where the hunger for memory is most prevalent, but will later also finds its way to desktops and notebooks.S|A

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